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	Semiconductor light emitting device and method for fabricating same
	TAKATANI, KUNIHIRO; HANAOKA, DAISUKE; ISHIDA, MASAYA
	2010-02-02
著作权人	SHARP KABUSHIKI KAISHA
专利号	US7656916
国家	美国
文献子类	授权发明
其他题名	Semiconductor light emitting device and method for fabricating same
英文摘要	A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device.
公开日期	2010-02-02
申请日期	2007-12-19
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/37356]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	TAKATANI, KUNIHIRO,HANAOKA, DAISUKE,ISHIDA, MASAYA. Semiconductor light emitting device and method for fabricating same. US7656916. 2010-02-02.

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