Diode-laser system for hyperpolarized He-3 and Xe-129 gas generation and other applications
MUELLER, OTWARD MARIA
2003-08-26
著作权人MUELLER OTWARD MARIA
专利号US6611540
国家美国
文献子类授权发明
其他题名Diode-laser system for hyperpolarized He-3 and Xe-129 gas generation and other applications
英文摘要Commercially available diode lasers are operated immersed in liquid nitrogen (LN2, 77 K), in another cryo-fluid, or are cryo-cooled (77 K-250 K) by conduction in all high-power (>0.1 W) applications. The result is higher output power per diode chip area, higher conversion efficiency, lower cost per watt of laser power, longer lifetime, higher reliability, smaller thermal gradients inside the laser chip and therefore better thermal management due to the higher thermal conductivity of the semiconductor and substrate material. The cryo-diode lasers are driven by cryogenically cooled and integrated power electronics ciruitry using Cryo-MOSFETs or Cryo-CMOS ICs. Applications of the Cryo-Diode Laser/Cryo-Driver assembly include generation of hyperpolarized He-3 or Xe-129 gases for inert gas magnetic resonance imaging of the airways in human beings, metal and materials working and processing with laser tools, "pumping" solid-state lasers and many others. In high-power laser applications, the invention makes use of the "load shedding" capability of liquid nitrogen. The Cryo-Diode Laser/Cryo-Driver assembly can also be supplied with cooling fluid from an LN2 distribution system provided by a HTS cable. MLI is used for energy storage in laser pulse power applications.
公开日期2003-08-26
申请日期1999-07-29
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/36592]  
专题半导体激光器专利数据库
作者单位MUELLER OTWARD MARIA
推荐引用方式
GB/T 7714
MUELLER, OTWARD MARIA. Diode-laser system for hyperpolarized He-3 and Xe-129 gas generation and other applications. US6611540. 2003-08-26.
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