Diode-laser system for hyperpolarized He-3 and Xe-129 gas generation and other applications | |
MUELLER, OTWARD MARIA | |
2003-08-26 | |
著作权人 | MUELLER OTWARD MARIA |
专利号 | US6611540 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Diode-laser system for hyperpolarized He-3 and Xe-129 gas generation and other applications |
英文摘要 | Commercially available diode lasers are operated immersed in liquid nitrogen (LN2, 77 K), in another cryo-fluid, or are cryo-cooled (77 K-250 K) by conduction in all high-power (>0.1 W) applications. The result is higher output power per diode chip area, higher conversion efficiency, lower cost per watt of laser power, longer lifetime, higher reliability, smaller thermal gradients inside the laser chip and therefore better thermal management due to the higher thermal conductivity of the semiconductor and substrate material. The cryo-diode lasers are driven by cryogenically cooled and integrated power electronics ciruitry using Cryo-MOSFETs or Cryo-CMOS ICs. Applications of the Cryo-Diode Laser/Cryo-Driver assembly include generation of hyperpolarized He-3 or Xe-129 gases for inert gas magnetic resonance imaging of the airways in human beings, metal and materials working and processing with laser tools, "pumping" solid-state lasers and many others. In high-power laser applications, the invention makes use of the "load shedding" capability of liquid nitrogen. The Cryo-Diode Laser/Cryo-Driver assembly can also be supplied with cooling fluid from an LN2 distribution system provided by a HTS cable. MLI is used for energy storage in laser pulse power applications. |
公开日期 | 2003-08-26 |
申请日期 | 1999-07-29 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/36592] |
专题 | 半导体激光器专利数据库 |
作者单位 | MUELLER OTWARD MARIA |
推荐引用方式 GB/T 7714 | MUELLER, OTWARD MARIA. Diode-laser system for hyperpolarized He-3 and Xe-129 gas generation and other applications. US6611540. 2003-08-26. |
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