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	Methods for soldering semiconductor devices
	KAMIYAMA, SATOSHI; OHNAKA, KIYOSHI
	1992-01-21
著作权人	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., 1006 OAZA KADOMA, KADOMA, OSAKA 571, JAPAN
专利号	US5082162
国家	美国
文献子类	授权发明
其他题名	Methods for soldering semiconductor devices
英文摘要	This invention presents a new soldering material comprising an indium layer formed on EFTE film for solder-mounting a semiconductor device onto a metal heat sink. This indium layer can be easily transferred onto the heat sink by pressure applied by a tool, without the aid of ultrasonic energy. This produces a highly immaculate surface of the indium layer transferred onto the heat sink, and achieves stable soldering strength of the soldered semiconductor device. This invention also offers a multi-layered soldering material comprising a thin layer of metal of which the melting point is higher than the soldering temperature, and two indium layers sandwiching said metal layer, formed on an EFTE film. This multi-layered soldering material can be easily transferred onto a metal heat sink by a pressure applying tool without the aid of ultrasonic energy resulting in the stable soldering of a semiconductor device even if it has surface irregularities, without causing an electrical leakage or short circuit.
公开日期	1992-01-21
申请日期	1991-02-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/36023]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., 1006 OAZA KADOMA, KADOMA, OSAKA 571, JAPAN
推荐引用方式 GB/T 7714	KAMIYAMA, SATOSHI,OHNAKA, KIYOSHI. Methods for soldering semiconductor devices. US5082162. 1992-01-21.

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