| Method for fabricating semiconductor device | |
| UEDA, TETSUZO | |
| 2005-04-19 | |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 专利号 | US6881261 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating semiconductor device |
| 英文摘要 | A p-type InGaAlN layer, an InGaAlN active layer, and an n-type InGaAlN layer each having a composition represented by (AlxGa1-x)yIn1-yN (0≦x≦1, 0≦y≦1) are formed on a sapphire substrate. In the as-grown state, Mg is bonded to hydrogen atoms in the p-type InGaAlN layer. Then, the back surface of the sapphire substrate is irradiated with a laser beam in a nitrogen atmosphere. The resistance of the p-type InGaAlN layer is reduced by removing hydrogen therefrom with irradiation with a weak laser beam. During the irradiation with the laser beam, the diffusion of a dopant in a multilayer portion is suppressed such that a dopant profile retains sharpness. It is also possible to separate the sapphire substrate from the multilayer portion by subsequently using an intense laser beam for irradiation. |
| 公开日期 | 2005-04-19 |
| 申请日期 | 2002-11-13 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35504]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | UEDA, TETSUZO. Method for fabricating semiconductor device. US6881261. 2005-04-19. |
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