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	Optical devices with heavily doped multiple quantum wells
	CHO, ALFRED YI; GMACHL, CLAIRE F.; NG, HOCK MIN
	2005-05-10
著作权人	LUCENT TECHNOLOGIES INC.
专利号	US6891187
国家	美国
文献子类	授权发明
其他题名	Optical devices with heavily doped multiple quantum wells
英文摘要	A quantum well structure is provided that includes two or more quantum well layers coupled by at least one barrier layer such that at least one of a piezo-electric field and a pyro-electric field is produced. The quantum well structure is sufficiently doped to cause a Fermi energy to be located between ground states and excited states of the coupled quantum well layers. The quantum well structure can be incorporated into a layered semiconductor to form optical devices such as a laser or optical amplifier.
公开日期	2005-05-10
申请日期	2002-04-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35477]
专题	半导体激光器专利数据库
作者单位	LUCENT TECHNOLOGIES INC.
推荐引用方式 GB/T 7714	CHO, ALFRED YI,GMACHL, CLAIRE F.,NG, HOCK MIN. Optical devices with heavily doped multiple quantum wells. US6891187. 2005-05-10.

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