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	Sermiconductor light emitting device and method of manufacturing the same
	BADER, STEFAN; HAHN, BERTHOLD; HÄRLE, VOLKER; LUGAUER, HANS-JÜRGEN; MUNDBROD-VANGEROW, MANFRED; EISERT, DOMINIK
	2018-01-10
著作权人	OSRAM OPTO SEMICONDUCTORS GMBH
专利号	EP2270875B1
国家	欧洲专利局
文献子类	授权发明
其他题名	Sermiconductor light emitting device and method of manufacturing the same
英文摘要	Radiation-emitting semiconductor element comprises a semiconductor body made from a stack of different III-V nitride semiconductor layers (1) and having a first main surface (3) and a second main surface (4). A part of the radiation produced is coupled out through the first main surface. A reflector (6) is applied to the second main surface. An independent claim is also included for a process for the production of the semiconductor element. Preferred Features: The semiconductor layers consist of GaN, AlN, AAlGaN, InGaN, InAlN or AlInGaN. The reflector is formed by a mirroring metallic contact surface made from Ag, Al or a Ag-Al alloy.
公开日期	2018-01-10
申请日期	2001-03-16
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/35398]
专题	半导体激光器专利数据库
作者单位	OSRAM OPTO SEMICONDUCTORS GMBH
推荐引用方式 GB/T 7714	BADER, STEFAN,HAHN, BERTHOLD,HÄRLE, VOLKER,et al. Sermiconductor light emitting device and method of manufacturing the same. EP2270875B1. 2018-01-10.

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