| Bonding pad metallization for semiconductor devices | |
| RAO, SRINIVAS T.; MOTT, JEOFFREY | |
| 1984-01-03 | |
| 著作权人 | MCDONNELL DOUGLAS CORPORATION, A CORP OF MD |
| 专利号 | US4424527 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Bonding pad metallization for semiconductor devices |
| 英文摘要 | The invention is directed to a bonding pad metallization for stress sensitive semiconductor devices such as semiconductor lasers or the like. An attendant advantage is a diffusion barrier layer which inhibits the migration of conventional bonding materials such as indium solder. |
| 公开日期 | 1984-01-03 |
| 申请日期 | 1981-07-31 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34723]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MCDONNELL DOUGLAS CORPORATION, A CORP OF MD |
| 推荐引用方式 GB/T 7714 | RAO, SRINIVAS T.,MOTT, JEOFFREY. Bonding pad metallization for semiconductor devices. US4424527. 1984-01-03. |
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