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	Electro-optical device with III-V gain materials and integrated heat sink
	CAER, CHARLES; HAHN, HERWIG
	2019-04-09
著作权人	INTERNATIONAL BUSINESS MACHINES CORPORATION
专利号	US10256603
国家	美国
文献子类	授权发明
其他题名	Electro-optical device with III-V gain materials and integrated heat sink
英文摘要	An electro-optical device having two wafer components and a device fabrication method. A first wafer component includes a silicon substrate and a cladding layer on top thereof. The cladding layer comprises a cavity formed therein, wherein the cavity is filled with an electrically insulating thermal spreader, which has a thermal conductivity larger than that of the cladding layer. The second wafer component comprises a stack of III-V semiconductor gain materials, designed for optical amplification of a given radiation. The second wafer component is bonded to the first wafer component, such that the stack of III-V semiconductor gain materials is in thermal communication with the thermal spreader. In addition, the thermal spreader has a refractive index that is lower than each of the refractive index of the silicon substrate and an average refractive index of the stack of III-V semiconductor gain materials for said given radiation.
公开日期	2019-04-09
申请日期	2017-11-06
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/32360]
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式 GB/T 7714	CAER, CHARLES,HAHN, HERWIG. Electro-optical device with III-V gain materials and integrated heat sink. US10256603. 2019-04-09.

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