| Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy | |
| Qiang Hu; Tongbo Wei; Ruifei Duan; Jiankun Yang; Ziqiang Huo; Yiping Zeng; Shu Xu | |
| 刊名 | Materials Science in Semiconductor Processing
 |
| 2012 | |
| 卷号 | 15期号:1页码:15-19 |
| 关键词 | GaN Freestanding substrates Wet chemical etching Raman scattering Photoluminescence |
| ISSN号 | 1369-8001 |
| DOI | 10.1016/j.mssp.2011.05.006 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000305111900005;EI:20122115046537 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5255551 |
| 专题 | 湖南城市学院 |
| 作者单位 | 1.[Tongbo Wei 2.Yiping Zeng 3.Jiankun Yang 4.Ziqiang Huo 5.Qiang Hu 6.Ruifei Duan] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Qiang Hu,Tongbo Wei,Ruifei Duan,et al. Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy[J]. Materials Science in Semiconductor Processing,2012,15(1):15-19. |
| APA | Qiang Hu.,Tongbo Wei.,Ruifei Duan.,Jiankun Yang.,Ziqiang Huo.,...&Shu Xu.(2012).Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy.Materials Science in Semiconductor Processing,15(1),15-19. |
| MLA | Qiang Hu,et al."Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy".Materials Science in Semiconductor Processing 15.1(2012):15-19. |
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