运算放大器不同剂量率的辐射损伤效应

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	运算放大器不同剂量率的辐射损伤效应
	陆妩; 任迪远; 郭旗; 余学峰; 艾尔肯
刊名	半导体学报
	2005
卷号	26 期号:7 页码:1464-1468
关键词	运算放大器 60Coγ辐照退火剂量率效应
ISSN号	2534177
其他题名	radiation effects of operational amplifier in different dose rates
中文摘要	对几种不同类型(TTL,CMOS,JFET Bi,MOS Bi)的典型星用运算放大器在不同剂量率(100,10,1及0.01rad(Si)/s)辐照下的响应规律及随时间变化的退火特性进行了研究.结果显示不同类型运放电路的辐照响应有明显差异:双极运放电路辐照剂量率越小,其损伤越大;CMOS运放电路对不同剂量率的响应并非线性关系,但不同剂量率辐照损伤的差异,可以通过与低剂量率相同时间的室温退火得到消除,本质上仍然是与时间相关的效应;JFET输入运放不仅有低剂量率辐照损伤增强效应存在,且辐照后还有明显的“后损伤”现象;PMOS输入运放的结果则表明,各辐照剂量率间的损伤无明显区别.
英文摘要	Radiation effects and annealing characteristics are investigated for different types of operational amplifiers at four dose rates ranging from 100 to 0.01 rad(Si)/s for same total doses. The results show that for the bipolar op-amps, the degradation is more pronounced at low dose rate than at high dose rate and dose rate effects also exist for CMOS op-amps, but different from bipolar op-amps. It represented that the lower the radiation dose rate was applied, the less the devices were damaged, and the deference induced by high dose rate irradiation can be eliminated by a long time annealing in room temperature. JFET-Bi op-amps have not only enhanced low dose rate sensitivity (ELDRS) effects when irradiated but also further obvious effects of post-radiation damage when annealing at room temperature. Moreover, it is also found that there is no difference when the pMOS-Bi op-amps was radiated in different dose rates.
学科主题	Engineering (provided by Thomson Reuters)
公开日期	2012-11-29
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/2142]
专题	新疆理化技术研究所_材料物理与化学研究室
作者单位	中国科学院新疆理化技术研究所
推荐引用方式 GB/T 7714	陆妩,任迪远,郭旗,等. 运算放大器不同剂量率的辐射损伤效应[J]. 半导体学报,2005,26(7):1464-1468.
APA	陆妩,任迪远,郭旗,余学峰,&艾尔肯.(2005).运算放大器不同剂量率的辐射损伤效应.半导体学报,26(7),1464-1468.
MLA	陆妩,et al."运算放大器不同剂量率的辐射损伤效应".半导体学报 26.7(2005):1464-1468.