Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array

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	Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array
	Gao Bo; Yu Xue-Feng; Ren Di-Yuan; Li Yu-Dong; Cui Jiang-Wei; Li Mao-Shun; Li Ming; Wang Yi-Yuan
刊名	ACTA PHYSICA SINICA
	2011
卷号	60 期号:3
关键词	(60)Co gamma total-dose irradiation damage effects SRAM-based FPGA CMOS cell
ISSN号	1000-3290
通讯作者	Yu, XF
英文摘要	In order to investigate the total-dose irradiation effects of Altera static random access memory (SRAM) -based FPGA (field programmable gate array), the irradiation response of basic cell of FPGA, i. e. the CMOS, is studied, and the relationship of the output waveform as a function of total dose has been obtained. It indicates that the output waveforms become aberrated and the peak-peak value turns to about 1/10 of the initial value as the total dose increased, resulting from the degradation of leakage current both from field oxygen and the structure; but there are relatively high and low levels left in the output waveforms. Meanwhile, the high level can't keep the already existing state and changes to the low level, and the conversion speed it; accelerated with the increase of the total dose. The low level becomes larger than the initial value. As the gate-oxygen is quite thin, the rise time, fall time, and delay of the output waveforms change little with the total dose.
学科主题	Physics
收录类别	SCI
WOS记录号	WOS:000288925700068
公开日期	2012-11-29
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/1670]
专题	新疆理化技术研究所_材料物理与化学研究室
作者单位	Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Prov Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Gao Bo,Yu Xue-Feng,Ren Di-Yuan,et al. Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array[J]. ACTA PHYSICA SINICA,2011,60(3).
APA	Gao Bo.,Yu Xue-Feng.,Ren Di-Yuan.,Li Yu-Dong.,Cui Jiang-Wei.,...&Wang Yi-Yuan.(2011).Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array.ACTA PHYSICA SINICA,60(3).
MLA	Gao Bo,et al."Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array".ACTA PHYSICA SINICA 60.3(2011).