Ultrafast synthesis of Si nanowires by DC arc discharge method and morphology control

CORC > 兰州化学物理研究所 > 中国科学院兰州化学物理研究所 > 固体润滑国家重点实验室

	Ultrafast synthesis of Si nanowires by DC arc discharge method and morphology control
	Chen JT(陈江涛)
刊名	Journal of Alloys and Compounds
	2009
卷号	475 页码:551-554
关键词	Nanostructured materials Crystal growth Catalysis SEM TEM
ISSN号	0925-8388
通讯作者	阎鹏勋
中文摘要	Silicon nanowires (SiNWs) have been synthesized by a facile direct current (DC) arc dischargemethod. The SiNWs have homogeneous diameters of 10–20 nm and lengths ranging from several ten nanometers to severalmicrons. Each SiNWinterconnectswith ametal nickel as catalyst.Morphology control of the prod- ucts can be easily achieved by adjusting the current and the voltage of the discharge. X-ray diffractometer (XRD), ﬁeld-emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM) and Selected-area electron diffraction (SAED) were used to study the structures and the morphology of the SiNWs. SiNWs were polycrystalline, which conﬁrmed by XRD and SAED. The formation mechanism of SiNWs generally attribute to the presence of Ni catalysts in the synthesis process of vapor–liquid–solid (VLS).
学科主题	材料科学与物理化学
收录类别	SCI
语种	英语
WOS记录号	WOS:000265911700116
公开日期	2012-12-04
内容类型	期刊论文
源URL	[http://210.77.64.217/handle/362003/2353]
专题	兰州化学物理研究所_固体润滑国家重点实验室
推荐引用方式 GB/T 7714	Chen JT. Ultrafast synthesis of Si nanowires by DC arc discharge method and morphology control[J]. Journal of Alloys and Compounds,2009,475:551-554.
APA	陈江涛.(2009).Ultrafast synthesis of Si nanowires by DC arc discharge method and morphology control.Journal of Alloys and Compounds,475,551-554.
MLA	陈江涛."Ultrafast synthesis of Si nanowires by DC arc discharge method and morphology control".Journal of Alloys and Compounds 475(2009):551-554.