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The damage analysis of Nd:YVO 4 crystal implanted by He + ions at low energy
Ma Y.; Lu F.; Ming X.; Yin J.; Chen M.
刊名2012 Symposium on Photonics and Optoelectronics, SOPO 2012
2012
关键词annealing He + ions implantation lattice damage Nd:YVO 4 crystal photoluminescence
DOI10.1109/SOPO.2012.6270458
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5204817
专题山东大学
作者单位1.School of Information Science and Engineering, Shandong University, Jinan, Shandong 250100, China
2.School of Information Science and E
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Ma Y.,Lu F.,Ming X.,et al. The damage analysis of Nd:YVO 4 crystal implanted by He + ions at low energy[J]. 2012 Symposium on Photonics and Optoelectronics, SOPO 2012,2012.
APA Ma Y.,Lu F.,Ming X.,Yin J.,&Chen M..(2012).The damage analysis of Nd:YVO 4 crystal implanted by He + ions at low energy.2012 Symposium on Photonics and Optoelectronics, SOPO 2012.
MLA Ma Y.,et al."The damage analysis of Nd:YVO 4 crystal implanted by He + ions at low energy".2012 Symposium on Photonics and Optoelectronics, SOPO 2012 (2012).
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