The damage analysis of Nd:YVO 4 crystal implanted by He + ions at low energy | |
Ma Y.; Lu F.; Ming X.; Yin J.; Chen M. | |
刊名 | 2012 Symposium on Photonics and Optoelectronics, SOPO 2012
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2012 | |
关键词 | annealing He + ions implantation lattice damage Nd:YVO 4 crystal photoluminescence |
DOI | 10.1109/SOPO.2012.6270458 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5204817 |
专题 | 山东大学 |
作者单位 | 1.School of Information Science and Engineering, Shandong University, Jinan, Shandong 250100, China 2.School of Information Science and E |
推荐引用方式 GB/T 7714 | Ma Y.,Lu F.,Ming X.,et al. The damage analysis of Nd:YVO 4 crystal implanted by He + ions at low energy[J]. 2012 Symposium on Photonics and Optoelectronics, SOPO 2012,2012. |
APA | Ma Y.,Lu F.,Ming X.,Yin J.,&Chen M..(2012).The damage analysis of Nd:YVO 4 crystal implanted by He + ions at low energy.2012 Symposium on Photonics and Optoelectronics, SOPO 2012. |
MLA | Ma Y.,et al."The damage analysis of Nd:YVO 4 crystal implanted by He + ions at low energy".2012 Symposium on Photonics and Optoelectronics, SOPO 2012 (2012). |
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