Grain boundary resistance to amorphization of nanocrystalline silicon carbide | |
Chen, Dong[1]; Gao, Fei[2]; Liu, Bo[3] | |
刊名 | Scientific Reports
![]() |
2015 | |
卷号 | 5页码:16602 |
ISSN号 | 2045-2322 |
DOI | http://dx.doi.org/10.1038/srep16602 |
URL标识 | 查看原文 |
收录类别 | SCI(E) ; PUBMED |
WOS记录号 | WOS:000364463100002 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5204480 |
专题 | 河南大学 |
作者单位 | 1.[1]Henan Univ, Dept Phys & Elect, Kaifeng 475004, Peoples R China. 2.[2]Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA. 3.[3]Henan Univ, Dept Phys & Elect, Kaifeng 475004, Peoples R China. |
推荐引用方式 GB/T 7714 | Chen, Dong[1],Gao, Fei[2],Liu, Bo[3]. Grain boundary resistance to amorphization of nanocrystalline silicon carbide[J]. Scientific Reports,2015,5:16602. |
APA | Chen, Dong[1],Gao, Fei[2],&Liu, Bo[3].(2015).Grain boundary resistance to amorphization of nanocrystalline silicon carbide.Scientific Reports,5,16602. |
MLA | Chen, Dong[1],et al."Grain boundary resistance to amorphization of nanocrystalline silicon carbide".Scientific Reports 5(2015):16602. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论