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	Fabrication of ohmic contact on the carbon-terminated surface of n-type silicon carbide
	Xu, Mingsheng; Hu, Xiaobo; Peng, Yan; Yang, Kun; Xia, Wei; Yu, Guojian; Xu, Xiangang
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2013
卷号	550页码:46-49
关键词	Ohmic contacts Carbon-terminated face n-Type SiC wafer
DOI	10.1016/j.jallcom.2012.09.071
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5177355
专题	山东大学
作者单位	Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples
推荐引用方式 GB/T 7714	Xu, Mingsheng,Hu, Xiaobo,Peng, Yan,et al. Fabrication of ohmic contact on the carbon-terminated surface of n-type silicon carbide[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2013,550:46-49.
APA	Xu, Mingsheng.,Hu, Xiaobo.,Peng, Yan.,Yang, Kun.,Xia, Wei.,...&Xu, Xiangang.(2013).Fabrication of ohmic contact on the carbon-terminated surface of n-type silicon carbide.JOURNAL OF ALLOYS AND COMPOUNDS,550,46-49.
MLA	Xu, Mingsheng,et al."Fabrication of ohmic contact on the carbon-terminated surface of n-type silicon carbide".JOURNAL OF ALLOYS AND COMPOUNDS 550(2013):46-49.

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