Preliminary-results of gaas single-crystal growth under high gravity conditions

CORC > 力学研究所 > 中国科学院力学研究所 > 力学所知识产出(1956-2008)

	Preliminary-results of gaas single-crystal growth under high gravity conditions
	Zhong XR; Zhou BJ; Yan QM; Cao FN; Li CJ; Lin LY; Ma WJ; Zheng Y; Tao F; Xue ML(薛明伦)
刊名	Journal of Crystal Growth
	1992
卷号	119 期号:1-2 页码:74-78
ISSN号	0022-0248
通讯作者	ZHONG, XR (reprint author), CHINESE ACAD SCI,INST SEMICOND,SEMICOND MAT SCI LAB,POB 912,BEIJING 100083,PEOPLES R CHINA.
中文摘要	GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.
类目[WOS]	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Crystallography ; Materials Science ; Physics
收录类别	SCI
语种	英语
WOS记录号	WOS:A1992HQ52000009
公开日期	2009-08-03 ; 2010-08-20
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/39480]
专题	力学研究所_力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Zhong XR,Zhou BJ,Yan QM,et al. Preliminary-results of gaas single-crystal growth under high gravity conditions[J]. Journal of Crystal Growth,1992,119(1-2):74-78.
APA	Zhong XR.,Zhou BJ.,Yan QM.,Cao FN.,Li CJ.,...&薛明伦.(1992).Preliminary-results of gaas single-crystal growth under high gravity conditions.Journal of Crystal Growth,119(1-2),74-78.
MLA	Zhong XR,et al."Preliminary-results of gaas single-crystal growth under high gravity conditions".Journal of Crystal Growth 119.1-2(1992):74-78.