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Photoluminescence decay properties of Si-rich-oxide/SiO2 multilayer films with different Si-quantum dots densities
Xu, Yanmei[1]; Han, Yinghui[2]; Liu, Chong[3]; Yu, Wei[4]
刊名SUPERLATTICES AND MICROSTRUCTURES
2014
卷号75页码:136-143
关键词Si quantum dots Time-resolved photoluminescence Quantum confinement effect
ISSN号0749-6036
DOIhttp://dx.doi.org/10.1016/j.spmi.2014.07.035
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5079743
专题河北大学
作者单位1.[1]North China Elect Power Univ, Coll Math & Phys, Baoding 071002, Peoples R China.
2.[2]North China Elect Power Univ, Coll Math & Phys, Baoding 071002, Peoples R China.
3.[3]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China.
4.[4]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China.
推荐引用方式
GB/T 7714
Xu, Yanmei[1],Han, Yinghui[2],Liu, Chong[3],et al. Photoluminescence decay properties of Si-rich-oxide/SiO2 multilayer films with different Si-quantum dots densities[J]. SUPERLATTICES AND MICROSTRUCTURES,2014,75:136-143.
APA Xu, Yanmei[1],Han, Yinghui[2],Liu, Chong[3],&Yu, Wei[4].(2014).Photoluminescence decay properties of Si-rich-oxide/SiO2 multilayer films with different Si-quantum dots densities.SUPERLATTICES AND MICROSTRUCTURES,75,136-143.
MLA Xu, Yanmei[1],et al."Photoluminescence decay properties of Si-rich-oxide/SiO2 multilayer films with different Si-quantum dots densities".SUPERLATTICES AND MICROSTRUCTURES 75(2014):136-143.
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