Photoluminescence decay properties of Si-rich-oxide/SiO2 multilayer films with different Si-quantum dots densities | |
Xu, Yanmei[1]; Han, Yinghui[2]; Liu, Chong[3]; Yu, Wei[4] | |
刊名 | SUPERLATTICES AND MICROSTRUCTURES |
2014 | |
卷号 | 75页码:136-143 |
关键词 | Si quantum dots Time-resolved photoluminescence Quantum confinement effect |
ISSN号 | 0749-6036 |
DOI | http://dx.doi.org/10.1016/j.spmi.2014.07.035 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5079743 |
专题 | 河北大学 |
作者单位 | 1.[1]North China Elect Power Univ, Coll Math & Phys, Baoding 071002, Peoples R China. 2.[2]North China Elect Power Univ, Coll Math & Phys, Baoding 071002, Peoples R China. 3.[3]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 4.[4]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. |
推荐引用方式 GB/T 7714 | Xu, Yanmei[1],Han, Yinghui[2],Liu, Chong[3],et al. Photoluminescence decay properties of Si-rich-oxide/SiO2 multilayer films with different Si-quantum dots densities[J]. SUPERLATTICES AND MICROSTRUCTURES,2014,75:136-143. |
APA | Xu, Yanmei[1],Han, Yinghui[2],Liu, Chong[3],&Yu, Wei[4].(2014).Photoluminescence decay properties of Si-rich-oxide/SiO2 multilayer films with different Si-quantum dots densities.SUPERLATTICES AND MICROSTRUCTURES,75,136-143. |
MLA | Xu, Yanmei[1],et al."Photoluminescence decay properties of Si-rich-oxide/SiO2 multilayer films with different Si-quantum dots densities".SUPERLATTICES AND MICROSTRUCTURES 75(2014):136-143. |
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