STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS

	STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS
	Zhao J. L. ; Gao Y. ; Liu X. Y. ; Dou K. ; Huang S. H. ; Yu J. Q. ; Liang J. C. ; Gao H. K.
刊名	Journal of Materials Science Letters
	1995
卷号	14 期号:14 页码:1004-1006
ISSN号	0261-8028
其他题名	论文其他题名
合作状况	合作性质
收录类别	SCI
语种	英语
公开日期	2012-10-21
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/25471]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao J. L.,Gao Y.,Liu X. Y.,et al. STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS[J]. Journal of Materials Science Letters,1995,14(14):1004-1006.
APA	Zhao J. L..,Gao Y..,Liu X. Y..,Dou K..,Huang S. H..,...&Gao H. K..(1995).STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS.Journal of Materials Science Letters,14(14),1004-1006.
MLA	Zhao J. L.,et al."STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS".Journal of Materials Science Letters 14.14(1995):1004-1006.