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	Mixed-phase Ni-Al as barrier layer against perovskite oxides to react with Cu for ferroelectric memory with Cu metallization
	Chen, J. H.[1]; Dai, X. H.[2]; Li, C. R.[3]; Cui, Y. L.[4]; Zhao, Q. X.[5]; Guo, J. X.[6]; Li, X. H.[7]; Zhang, X. Y.[8]; Wang, Y. L.[9]; Ma, L. X.[10]
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2016
卷号	666页码:197-203
关键词	Ferroelectric capacitor Cu metallization Barrier layer Ni-Al Failure mechanism Interfaces
ISSN号	0925-8388
DOI	http://dx.doi.org/10.1016/j.jallcom.2016.01.100
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5066005
专题	河北大学
作者单位	1.[1]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China. 2.[2]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China. 3.[3]Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat, Hangzhou 310018, Zhejiang, Peoples R China.,Zhejiang Sci Tech Univ, ATMMT Minist Educ, Key Lab, Hangzhou 310018, Zhejiang, Peoples R China. 4.[4]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China. 5.[5]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China. 6.[6]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China. 7.[7]Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China. 8.[8]Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China. 9.[9]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China. 10.[10]Blinn Coll, Dept Phys, Bryan, TX 77805 USA.
推荐引用方式 GB/T 7714	Chen, J. H.[1],Dai, X. H.[2],Li, C. R.[3],et al. Mixed-phase Ni-Al as barrier layer against perovskite oxides to react with Cu for ferroelectric memory with Cu metallization[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,666:197-203.
APA	Chen, J. H.[1].,Dai, X. H.[2].,Li, C. R.[3].,Cui, Y. L.[4].,Zhao, Q. X.[5].,...&Liu, B. T.[11].(2016).Mixed-phase Ni-Al as barrier layer against perovskite oxides to react with Cu for ferroelectric memory with Cu metallization.JOURNAL OF ALLOYS AND COMPOUNDS,666,197-203.
MLA	Chen, J. H.[1],et al."Mixed-phase Ni-Al as barrier layer against perovskite oxides to react with Cu for ferroelectric memory with Cu metallization".JOURNAL OF ALLOYS AND COMPOUNDS 666(2016):197-203.

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