| Study of PIN electrical modulation structure based on SiGe-OI material | |
| Feng, Song; Jiang, Ren-Ke; Gao, Yong | |
| 2015 | |
| 会议名称 | International Conference on Photonics and Optical Engineering (icPOE) |
| 会议日期 | 2014-10-13 |
| 会议地点 | Xian, PEOPLES R CHINA |
| 关键词 | Optoelectronic devices electrical modulation SiGe-OI PIN structure carrier concentration |
| 会议录 | INTERNATIONAL CONFERENCE ON PHOTONICS AND OPTICAL
 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000354183600136 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4991317 |
| 专题 | 西安理工大学 |
| 推荐引用方式 GB/T 7714 | Feng, Song,Jiang, Ren-Ke,Gao, Yong. Study of PIN electrical modulation structure based on SiGe-OI material[C]. 见:International Conference on Photonics and Optical Engineering (icPOE). Xian, PEOPLES R CHINA. 2014-10-13. |
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