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	Research on Time Jitter of GaAs Photoconductive Semiconductor Switches in the Negative Differential Mobility Region
	Zhang, Lin; Shi, Wei; Cao, Juncheng; Wang, Shaoqiang; Dong, Chengang; Yang, Lei
	2019
卷号	40页码:291-294
关键词	Time jitter gallium arsenide (GaAs) photoconductive semiconductor switches negative differential mobility (NDM) inter-valley transition of carriers
ISSN号	0741-3106
DOI	10.1109/LED.2018.2886477
URL标识	查看原文
WOS记录号	WOS:000457606300034
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4970026
专题	西安理工大学
推荐引用方式 GB/T 7714	Zhang, Lin,Shi, Wei,Cao, Juncheng,et al. Research on Time Jitter of GaAs Photoconductive Semiconductor Switches in the Negative Differential Mobility Region[J],2019,40:291-294.
APA	Zhang, Lin,Shi, Wei,Cao, Juncheng,Wang, Shaoqiang,Dong, Chengang,&Yang, Lei.(2019).Research on Time Jitter of GaAs Photoconductive Semiconductor Switches in the Negative Differential Mobility Region.,40,291-294.
MLA	Zhang, Lin,et al."Research on Time Jitter of GaAs Photoconductive Semiconductor Switches in the Negative Differential Mobility Region".40(2019):291-294.

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