QQ客服 官方微博 反馈留言

	A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules
	Yang, Yuan; Wen, Yang; Gao, Yong
	2019
卷号	34页码:7775-7787
关键词	Active gate driver (AGD) electromagnetic interference (EMI) silicon carbide (SiC) MOSFET overshoots
ISSN号	0885-8993
DOI	10.1109/TPEL.2018.2878779
URL标识	查看原文
WOS记录号	WOS:000469912200055
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4969002
专题	西安理工大学
推荐引用方式 GB/T 7714	Yang, Yuan,Wen, Yang,Gao, Yong. A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules[J],2019,34:7775-7787.
APA	Yang, Yuan,Wen, Yang,&Gao, Yong.(2019).A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules.,34,7775-7787.
MLA	Yang, Yuan,et al."A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules".34(2019):7775-7787.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。