Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices | |
Niu, Yingxi; Tang, Xiaoyan; Tian, Lixin; Zheng, Liu; Zhang, Wenting; Hu, Jichao; Kong, Lingyi; Zhang, Xinhe; Jia, Renxu; Yang, Fei | |
2019 | |
会议名称 | Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018 |
会议日期 | 2018-07-09 |
会议地点 | Beijing, China |
页码 | 114-120 |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4966114 |
专题 | 西安理工大学 |
推荐引用方式 GB/T 7714 | Niu, Yingxi,Tang, Xiaoyan,Tian, Lixin,et al. Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices[C]. 见:Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018. Beijing, China. 2018-07-09. |
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