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	Low-temperature physical vapor-phase depositing device for polycrystalline silicon membrane, has working gas hydrogen inlet and working gas argon inlet that are provided at upper surface of main vacuum chamber.
	DONG C EIJI T FAN P SU Y SUN Q XU J
	2011
公开日期	2011-04-06
URL标识	查看原文
申请日期	2010-09-28
内容类型	专利
URI标识	http://www.corc.org.cn/handle/1471x/4852830
专题	大连理工大学
作者单位	NISSIN ELECTRIC CO LTD UNIV DALIAN TECHNOLOGY NISSIN ELECTRIC DALIAN TECHNOLOGY DEV CO LTD NISSIN ELECTRIC DALIAN TECHNOLOGY DEV CO (NISS-Non-standard
推荐引用方式 GB/T 7714	DONG C EIJI T FAN P SU Y SUN Q XU J. Low-temperature physical vapor-phase depositing device for polycrystalline silicon membrane, has working gas hydrogen inlet and working gas argon inlet that are provided at upper surface of main vacuum chamber.. 2011-01-01.

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