QQ客服 官方微博 反馈留言

	Effects of Intrinsic Defects and Substrate Transfer Doping on the Electronic Structure of Sb2Te3 Thin Films on Graphene
	Chen, Li; Liu, Hongmei; Wang, Xiaoli; Wang, Dongchao; Li, Xiaolong
刊名	JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
	2014
卷号	83期号:3
DOI	10.7566/JPSJ.83.034713
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4797955
专题	山东大学
作者单位	Linyi Univ, Inst Condensed Matter Phys, Linyi 276000, Shandong, Peoples R China.
推荐引用方式 GB/T 7714	Chen, Li,Liu, Hongmei,Wang, Xiaoli,et al. Effects of Intrinsic Defects and Substrate Transfer Doping on the Electronic Structure of Sb2Te3 Thin Films on Graphene[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,2014,83(3).
APA	Chen, Li,Liu, Hongmei,Wang, Xiaoli,Wang, Dongchao,&Li, Xiaolong.(2014).Effects of Intrinsic Defects and Substrate Transfer Doping on the Electronic Structure of Sb2Te3 Thin Films on Graphene.JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,83(3).
MLA	Chen, Li,et al."Effects of Intrinsic Defects and Substrate Transfer Doping on the Electronic Structure of Sb2Te3 Thin Films on Graphene".JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN 83.3(2014).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。