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	The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
	Yuanjie Lv; Zhihong Feng; Zhaojun Lin; Ziwu Ji; Jingtao Zhao; Guodong Gu; Tingting Han; Jiayun Yin; Bo Liu; Shujun Cai
刊名	Journal of Applied Physics
	2014
期号	2页码:024504-1-024504-5
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4795032
专题	山东大学
作者单位	National Key Laboratory of Application Specific Integrated Circuit , Hebei Semiconductor Research Institute, Shijiazhuang
推荐引用方式 GB/T 7714	Yuanjie Lv,Zhihong Feng,Zhaojun Lin,et al. The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors[J]. Journal of Applied Physics,2014(2):024504-1-024504-5.
APA	Yuanjie Lv.,Zhihong Feng.,Zhaojun Lin.,Ziwu Ji.,Jingtao Zhao.,...&Shujun Cai.(2014).The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors.Journal of Applied Physics(2),024504-1-024504-5.
MLA	Yuanjie Lv,et al."The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors".Journal of Applied Physics .2(2014):024504-1-024504-5.

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