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	Influence of Nitrogen Concentrations on the Lattice Constants and Resistivities of n-Type 4H-SiC Single Crystals
	Cui, Yingxin; Hu, Xiaobo; Yang, Kun; Yang, Xianglong; Xie, Xuejian; Xiao, Longfei; Xu, Xiangang
刊名	Crystal growth & design
	2015
卷号	15期号:7页码:3131-3136
DOI	10.1021/cg501216d
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4786718
专题	山东大学
作者单位	1.State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China 2.State Key Laboratory of Crystal Materials, Shan
推荐引用方式 GB/T 7714	Cui, Yingxin,Hu, Xiaobo,Yang, Kun,et al. Influence of Nitrogen Concentrations on the Lattice Constants and Resistivities of n-Type 4H-SiC Single Crystals[J]. Crystal growth & design,2015,15(7):3131-3136.
APA	Cui, Yingxin.,Hu, Xiaobo.,Yang, Kun.,Yang, Xianglong.,Xie, Xuejian.,...&Xu, Xiangang.(2015).Influence of Nitrogen Concentrations on the Lattice Constants and Resistivities of n-Type 4H-SiC Single Crystals.Crystal growth & design,15(7),3131-3136.
MLA	Cui, Yingxin,et al."Influence of Nitrogen Concentrations on the Lattice Constants and Resistivities of n-Type 4H-SiC Single Crystals".Crystal growth & design 15.7(2015):3131-3136.

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