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	Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range
	Zhang, Huafu; Wu, Zhiming; Niu, Ruihua; Wu, Xuefei; he, Qiong; Jiang, Yadong
刊名	APPLIED SURFACE SCIENCE
	2015
卷号	331页码:92-97
关键词	Vanadium dioxide Terahertz transmission Hysteresis width Thin films Surface morphology
DOI	10.1016/j.apsusc.2015.01.013
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4778212
专题	山东大学
作者单位	Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Fil
推荐引用方式 GB/T 7714	Zhang, Huafu,Wu, Zhiming,Niu, Ruihua,et al. Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range[J]. APPLIED SURFACE SCIENCE,2015,331:92-97.
APA	Zhang, Huafu,Wu, Zhiming,Niu, Ruihua,Wu, Xuefei,he, Qiong,&Jiang, Yadong.(2015).Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range.APPLIED SURFACE SCIENCE,331,92-97.
MLA	Zhang, Huafu,et al."Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range".APPLIED SURFACE SCIENCE 331(2015):92-97.

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