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	High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition
	Xiang, R.F. ; Fang, Y.-Y. ; Dai, J.N. ; Zhang, L. ; Su, C.Y. ; Wu, Z.H. ; Yu, C.H. ; Xiong, H. ; Chen, C.Q. ; Hao, Y.
刊名	Journal of Alloys and Compounds.
	2011
卷号	509期号:5页码:2227-2231
ISSN号	09258388
通讯作者	Fang, Y.-Y.(yanyanfang.hust@gmail.com)
收录类别	EI-263
语种	英语
公开日期	2012-08-28
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/109340]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Xiang, R.F.,Fang, Y.-Y.,Dai, J.N.,et al. High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition[J]. Journal of Alloys and Compounds.,2011,509(5):2227-2231.
APA	Xiang, R.F..,Fang, Y.-Y..,Dai, J.N..,Zhang, L..,Su, C.Y..,...&Hao, Y..(2011).High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition.Journal of Alloys and Compounds.,509(5),2227-2231.
MLA	Xiang, R.F.,et al."High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition".Journal of Alloys and Compounds. 509.5(2011):2227-2231.

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