Thermal stability and interface improvement of thin NiSiGe by C<sup>+</sup> ion implantation

	Thermal stability and interface improvement of thin NiSiGe by C⁺ ion implantation
	Zhang, B ; Yu, W ; Zhao, QT ; Buca, D ; Hollä ; nder, B ; Hartmann, J.-M. ; Zhang, M ; Wang, X ; Mantl, S.
刊名	2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
	2011
期号	0
通讯作者	Zhao, Q.T.(q.zhao@fz-juelich.de)
公开日期	2012-08-28
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/109335]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, B,Yu, W,Zhao, QT,et al. Thermal stability and interface improvement of thin NiSiGe by C⁺ ion implantation[J]. 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011,2011(0).
APA	Zhang, B.,Yu, W.,Zhao, QT.,Buca, D.,Hollä.,...&Mantl, S..(2011).Thermal stability and interface improvement of thin NiSiGe by C⁺ ion implantation.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011(0).
MLA	Zhang, B,et al."Thermal stability and interface improvement of thin NiSiGe by C⁺ ion implantation".2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011.2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 .0(2011).