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	Maximizing the Current Output in Self-Aligned Graphene-InAs-Metal Vertical Transistors
	Liu, Y; Guo, J; Zhu, EB; Wang, PQ; Gambin, V; Huang, Y; Duan, XF
刊名	ACS NANO
	2019
卷号	Vol.13 No.1页码:847-854
关键词	graphene vertical transistor high current density van der Waals heterostructure InAs film resistor network model
ISSN号	1936-0851
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4738935
专题	湖南大学
作者单位	1.Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA 2.Hunan Univ, Sch Phys & Elect, Hunan Key Lab Two Dimens Mat, Changsha 410082, Hunan, Peoples R China 3.Hunan Univ, Sch Phys & Elect, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Hunan, Peoples R China 4.Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA 5.Northrop Grumman Aerosp Syst, NG NEXT, Redondo Beach, CA 90278 USA 6.Univ Calif Los Angeles, Calif Nanosyst Inst, Los Angeles, CA 90095 USA
推荐引用方式 GB/T 7714	Liu, Y,Guo, J,Zhu, EB,et al. Maximizing the Current Output in Self-Aligned Graphene-InAs-Metal Vertical Transistors[J]. ACS NANO,2019,Vol.13 No.1:847-854.
APA	Liu, Y.,Guo, J.,Zhu, EB.,Wang, PQ.,Gambin, V.,...&Duan, XF.(2019).Maximizing the Current Output in Self-Aligned Graphene-InAs-Metal Vertical Transistors.ACS NANO,Vol.13 No.1,847-854.
MLA	Liu, Y,et al."Maximizing the Current Output in Self-Aligned Graphene-InAs-Metal Vertical Transistors".ACS NANO Vol.13 No.1(2019):847-854.

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