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	An Analytical Surface-Potential-Based Drain Current Model of Full Depleted Polysilicon TFTs
	Yu, Fei[1]; Deng, Wanling[2]; Huang, Gongyi[1]; Xu, Chuanzhong[1]; Ma, Xiaoyu[2]; Huang, Junkai[2]
	2018
卷号	65期号:7页码:2855
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4624862
专题	暨南大学
作者单位	1.[1]Huaqiao Univ, Coll Informat Sci & Engn, Xiamen 361021, Peoples R China 2.[2]Jinan Univ, Dept Elect Engn, Guangzhou 510630, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Yu, Fei[1],Deng, Wanling[2],Huang, Gongyi[1],et al. An Analytical Surface-Potential-Based Drain Current Model of Full Depleted Polysilicon TFTs[J],2018,65(7):2855.
APA	Yu, Fei[1],Deng, Wanling[2],Huang, Gongyi[1],Xu, Chuanzhong[1],Ma, Xiaoyu[2],&Huang, Junkai[2].(2018).An Analytical Surface-Potential-Based Drain Current Model of Full Depleted Polysilicon TFTs.,65(7),2855.
MLA	Yu, Fei[1],et al."An Analytical Surface-Potential-Based Drain Current Model of Full Depleted Polysilicon TFTs".65.7(2018):2855.

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