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Van der Waals epitaxial growth of vertically stacked SbTe/MoS p–n heterojunctions for high performance optoelectronics
Huawei Liu; Dong Li; Chao Ma; Xuehong Zhang; Xingxia Sun; Chenguang Zhu; Biyuan Zheng; Zixing Zou; Ziyu Luo; Xiaoli Zhu
刊名Nano Energy
2019
卷号Vol.59页码:66-74
关键词P–n heterojunction Van der Waals epitaxial Charge transfer Photovoltaic Photodetector
ISSN号2211-2855
URL标识查看原文
公开日期[db:dc_date_available]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4617003
专题湖南大学
作者单位1.a Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
2.College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
推荐引用方式
GB/T 7714
Huawei Liu,Dong Li,Chao Ma,et al. Van der Waals epitaxial growth of vertically stacked SbTe/MoS p–n heterojunctions for high performance optoelectronics[J]. Nano Energy,2019,Vol.59:66-74.
APA Huawei Liu.,Dong Li.,Chao Ma.,Xuehong Zhang.,Xingxia Sun.,...&Anlian Pan.(2019).Van der Waals epitaxial growth of vertically stacked SbTe/MoS p–n heterojunctions for high performance optoelectronics.Nano Energy,Vol.59,66-74.
MLA Huawei Liu,et al."Van der Waals epitaxial growth of vertically stacked SbTe/MoS p–n heterojunctions for high performance optoelectronics".Nano Energy Vol.59(2019):66-74.
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