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	Large negative differential resistance behavior in arsenene nanoribbons induced by vacant defects
	Wei-Hua Xiao; Fang Xie; Xiao-Jiao Zhang; Yu-Fang Chu; Jian-Ping Liu; Hai-Yan Wang; Zhi-Qiang Fan; Meng-Qiu Long; Ke-Qiu Chen
刊名	Physics Letters A
	2019
关键词	Electronic structure Arsenene nanoribbon Negative differential resistance behavior Density-functional theory
ISSN号	0375-9601
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4616944
专题	湖南大学
作者单位	1.c Hunan Key laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China 2.Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China 3.Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China a Physics Science and Engineering Technology College, Yichun University, Yichun 336000, China
推荐引用方式 GB/T 7714	Wei-Hua Xiao,Fang Xie,Xiao-Jiao Zhang,et al. Large negative differential resistance behavior in arsenene nanoribbons induced by vacant defects[J]. Physics Letters A,2019.
APA	Wei-Hua Xiao.,Fang Xie.,Xiao-Jiao Zhang.,Yu-Fang Chu.,Jian-Ping Liu.,...&Ke-Qiu Chen.(2019).Large negative differential resistance behavior in arsenene nanoribbons induced by vacant defects.Physics Letters A.
MLA	Wei-Hua Xiao,et al."Large negative differential resistance behavior in arsenene nanoribbons induced by vacant defects".Physics Letters A (2019).

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