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	Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors
	Yuan Liu; Jian Guo; Enbo Zhu; Peiqi Wang; Vincent Gambin; Yu Huang; Xiangfeng Duan
刊名	ACS Nano
	2019
卷号	Vol.13 No.1页码:847-854
关键词	graphene high current density InAs film resistor network model van der Waals heterostructure vertical transistor
ISSN号	1936-0851;1936-086X
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4616756
专题	湖南大学
作者单位	Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China § Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, United States ∥ NG NEXT, Northrop Grumman Aerospace Systems, Redondo Beach, California 90278, United States ⊥ California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
推荐引用方式 GB/T 7714	Yuan Liu,Jian Guo,Enbo Zhu,et al. Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors[J]. ACS Nano,2019,Vol.13 No.1:847-854.
APA	Yuan Liu.,Jian Guo.,Enbo Zhu.,Peiqi Wang.,Vincent Gambin.,...&Xiangfeng Duan.(2019).Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors.ACS Nano,Vol.13 No.1,847-854.
MLA	Yuan Liu,et al."Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors".ACS Nano Vol.13 No.1(2019):847-854.

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