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	Interface engineering for two-dimensional semiconductor transistors
	Bei Jiang; Zhenyu Yang; Xingqiang Liu; Yuan Liu; Lei Liao
刊名	Nano Today
	2019
卷号	Vol.25页码:122-134
关键词	2D materials Field effect transistors Contact Dielectric Surface charge transfer Intercalation
ISSN号	1748-0132
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4615773
专题	湖南大学
作者单位	1.a School of Physics and Technology, Wuhan University, Wuhan 430072, China 2.State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China
推荐引用方式 GB/T 7714	Bei Jiang,Zhenyu Yang,Xingqiang Liu,et al. Interface engineering for two-dimensional semiconductor transistors[J]. Nano Today,2019,Vol.25:122-134.
APA	Bei Jiang,Zhenyu Yang,Xingqiang Liu,Yuan Liu,&Lei Liao.(2019).Interface engineering for two-dimensional semiconductor transistors.Nano Today,Vol.25,122-134.
MLA	Bei Jiang,et al."Interface engineering for two-dimensional semiconductor transistors".Nano Today Vol.25(2019):122-134.

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