Magnetic-field-induced log-T insulating behavior in the resistivity of fluorine-doped SmFeAsO1-xFx | |
Riggs, SC ; Kemper, JB ; Jo, Y ; Stegen, Z ; Balicas, L ; Boebinger, GS ; Balakirev, FF ; Migliori, A ; Chen, H ; Liu, RH ; Chen, XH | |
刊名 | physical review b |
2009-06-01 | |
卷号 | 79期号:21 |
学科主题 | 中科院强磁场科学中心 |
公开日期 | 2012-07-18 |
内容类型 | 期刊论文 |
源URL | [http://ir.hfcas.ac.cn/handle/334002/7211] |
专题 | 合肥物质科学研究院_中科院强磁场科学中心 |
推荐引用方式 GB/T 7714 | Riggs, SC,Kemper, JB,Jo, Y,et al. Magnetic-field-induced log-T insulating behavior in the resistivity of fluorine-doped SmFeAsO1-xFx[J]. physical review b,2009,79(21). |
APA | Riggs, SC.,Kemper, JB.,Jo, Y.,Stegen, Z.,Balicas, L.,...&Chen, XH.(2009).Magnetic-field-induced log-T insulating behavior in the resistivity of fluorine-doped SmFeAsO1-xFx.physical review b,79(21). |
MLA | Riggs, SC,et al."Magnetic-field-induced log-T insulating behavior in the resistivity of fluorine-doped SmFeAsO1-xFx".physical review b 79.21(2009). |
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