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	Efficient Gate Modulation in a Screening-Engineered MoS/Single-Walled Carbon Nanotube Network Heterojunction Vertical Field-Effect Transistor.
	Phan, TL; Vu, QA; Kim, YR; Shin, YS; Lee, IM; Tran, MD; Jiang, JB; Luong, DH; Liao, L; Lee, YH
刊名	ACS applied materials & interfaces
	2019
关键词	carbon nanotubes graphene heterostructure molybdenum disulfide vertical field-effect transistor
ISSN号	1944-8252
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4612629
专题	湖南大学
作者单位	1.Sungkyunkwan Univ, Inst Basic Sci, Ctr Integrated Nanostruct Phys, Dept Elect & Comp Engn, Suwon 16419, South Korea 2.Sungkyunkwan Univ, Inst Basic Sci, Ctr Integrated Nanostruct Phys, Dept Energy Sci, Suwon 16419, South Korea 3.Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micro Nanooptoelect Devices, Changsha 410082, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Phan, TL,Vu, QA,Kim, YR,et al. Efficient Gate Modulation in a Screening-Engineered MoS/Single-Walled Carbon Nanotube Network Heterojunction Vertical Field-Effect Transistor.[J]. ACS applied materials & interfaces,2019.
APA	Phan, TL.,Vu, QA.,Kim, YR.,Shin, YS.,Lee, IM.,...&Lee, YH.(2019).Efficient Gate Modulation in a Screening-Engineered MoS/Single-Walled Carbon Nanotube Network Heterojunction Vertical Field-Effect Transistor..ACS applied materials & interfaces.
MLA	Phan, TL,et al."Efficient Gate Modulation in a Screening-Engineered MoS/Single-Walled Carbon Nanotube Network Heterojunction Vertical Field-Effect Transistor.".ACS applied materials & interfaces (2019).

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