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	Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors
	Yuan Liu; Jian Guo; Enbo Zhu; Peiqi Wang; Vincent Gambin; Yu Huang; Xiangfeng Duan
刊名	ACS Nano
	2019
卷号	Vol.13 No.1页码:847-854
关键词	graphene vertical transistor high current density van der Waals heterostructure InAs film resistor network model
ISSN号	1936-0851;1936-086X
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4610453
专题	湖南大学
作者单位	Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, United States NG NEXT, Northrop Grumman Aerospace Systems, Redondo Beach, California 90278, United States Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States California Nanosystems Institute, University of California, Los Angeles, California 90095, United States Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, United States California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
推荐引用方式 GB/T 7714	Yuan Liu,Jian Guo,Enbo Zhu,et al. Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors[J]. ACS Nano,2019,Vol.13 No.1:847-854.
APA	Yuan Liu.,Jian Guo.,Enbo Zhu.,Peiqi Wang.,Vincent Gambin.,...&Xiangfeng Duan.(2019).Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors.ACS Nano,Vol.13 No.1,847-854.
MLA	Yuan Liu,et al."Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors".ACS Nano Vol.13 No.1(2019):847-854.

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