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	High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation
	Huan Liu; Genquan Han; Yan Liu; Xiaosheng Tang; Jingchen Yang; Yue Hao
刊名	Nanoscale Research Letters
	2019
卷号	Vol.14 No.1
关键词	Germanium MOSFET Amorphous Si passivation Mobility Surface orientation
ISSN号	1931-7573;1556-276X
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4607065
专题	湖南大学
作者单位	1.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics,Xidian University,Xi’an,China 2.College of Optoelectronic Engineering,Chongqing University,Chongqing,China
推荐引用方式 GB/T 7714	Huan Liu,Genquan Han,Yan Liu,et al. High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation[J]. Nanoscale Research Letters,2019,Vol.14 No.1.
APA	Huan Liu,Genquan Han,Yan Liu,Xiaosheng Tang,Jingchen Yang,&Yue Hao.(2019).High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation.Nanoscale Research Letters,Vol.14 No.1.
MLA	Huan Liu,et al."High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation".Nanoscale Research Letters Vol.14 No.1(2019).

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