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	Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications
	Yang Yang; Huiying Du; Qiang Xue; Xianhua Wei; Zhibin Yang; Chenggang Xu; Dunmin Lin; Wenjing Jie; Jianhua Hao
刊名	Nano Energy
	2019
卷号	Vol.57页码:566-573
关键词	2D materials GaSe Resistive switching Memristors Memtransistors
ISSN号	2211-2855
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4606459
专题	湖南大学
作者单位	1.d Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, and the Key Laboratory of Optoelectronics Information and Technology, Ministry of Education, Tianjin University, Tianjin 300072, China a College of Chemistry and Materials science, Sichuan Normal University, Chengdu 610066, China 2.Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China 3.State Key Laboratory of Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
推荐引用方式 GB/T 7714	Yang Yang,Huiying Du,Qiang Xue,et al. Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications[J]. Nano Energy,2019,Vol.57:566-573.
APA	Yang Yang.,Huiying Du.,Qiang Xue.,Xianhua Wei.,Zhibin Yang.,...&Jianhua Hao.(2019).Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications.Nano Energy,Vol.57,566-573.
MLA	Yang Yang,et al."Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications".Nano Energy Vol.57(2019):566-573.

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