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	Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer
	Sheng Zhang; Ke Wei; Xiao-Hua Ma; Bin Hou; Guo-Guo Liu; Yi-chuan Zhang; Xin-Hua Wang; Ying-Kui Zheng; Sen Huang; Yan-Kui Li
刊名	Applied Physics Letters
	2019
卷号	Vol.114 No.1页码:013503
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4605145
专题	湖南大学
推荐引用方式 GB/T 7714	Sheng Zhang,Ke Wei,Xiao-Hua Ma,et al. Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer[J]. Applied Physics Letters,2019,Vol.114 No.1:013503.
APA	Sheng Zhang.,Ke Wei.,Xiao-Hua Ma.,Bin Hou.,Guo-Guo Liu.,...&Xin-Yu Liu.(2019).Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer.Applied Physics Letters,Vol.114 No.1,013503.
MLA	Sheng Zhang,et al."Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer".Applied Physics Letters Vol.114 No.1(2019):013503.

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