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	Tellurium-Based Double Perovskites ATeX with Tunable Band Gap and Long Carrier Diffusion Length for Optoelectronic Applications
	Dianxing Ju; Xiaopeng Zheng; Jun Yin; Zhiwen Qiu; Bekir Türedi; Xiaolong Liu; Yangyang Dang; Bingqiang Cao; Omar F. Mohammed; Osman M. Bakr
刊名	ACS Energy Letters
	2019
卷号	Vol.4 No.1页码:228-234
ISSN号	2380-8195
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4602423
专题	湖南大学
作者单位	State Key Laboratory of Crystal Materials & Institute of Crystal Materials, Shandong University, No. 27 Shanda South Road, Jinan 250100, P.R. China KAUST Catalysis Center, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia § Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia ∥ Materials Research Center for Energy and Photoelectrochemical Conversion, School of Material Science and Engineering, University of Jinan, Jinan 250022, Shandong, China ⊥ Department of Physics and Institute of Laser, Qufu Normal University, Qufu 273165, China
推荐引用方式 GB/T 7714	Dianxing Ju,Xiaopeng Zheng,Jun Yin,et al. Tellurium-Based Double Perovskites ATeX with Tunable Band Gap and Long Carrier Diffusion Length for Optoelectronic Applications[J]. ACS Energy Letters,2019,Vol.4 No.1:228-234.
APA	Dianxing Ju.,Xiaopeng Zheng.,Jun Yin.,Zhiwen Qiu.,Bekir Türedi.,...&Xutang Tao.(2019).Tellurium-Based Double Perovskites ATeX with Tunable Band Gap and Long Carrier Diffusion Length for Optoelectronic Applications.ACS Energy Letters,Vol.4 No.1,228-234.
MLA	Dianxing Ju,et al."Tellurium-Based Double Perovskites ATeX with Tunable Band Gap and Long Carrier Diffusion Length for Optoelectronic Applications".ACS Energy Letters Vol.4 No.1(2019):228-234.

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