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	Comparable charge transport property based on S center dot center dot center dot S interactions with that of pi-pi stacking in a bis-fused tetrathiafulvalene compound
	Zhou, Ke; Chen, Hongfeng; Dong, Huanli; Fang, Qi; Hu, Wenping
刊名	中国科学. 化学
	2017
卷号	60期号:4页码:510-515
关键词	bis-fused TTF derivative single crystal electrical conductivity hole carrier mobility
DOI	10.1007/s11426-016-9011-9
会议名称	International Conference on the Science and Technology of Synthetic Metals (ICSM)
URL标识	查看原文
会议日期	JUN 26-JUL 01, 2016
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4593614
专题	山东大学
作者单位	Institute of Chemistry, Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, B
推荐引用方式 GB/T 7714	Zhou, Ke,Chen, Hongfeng,Dong, Huanli,et al. Comparable charge transport property based on S center dot center dot center dot S interactions with that of pi-pi stacking in a bis-fused tetrathiafulvalene compound[J]. 中国科学. 化学,2017,60(4):510-515.
APA	Zhou, Ke,Chen, Hongfeng,Dong, Huanli,Fang, Qi,&Hu, Wenping.(2017).Comparable charge transport property based on S center dot center dot center dot S interactions with that of pi-pi stacking in a bis-fused tetrathiafulvalene compound.中国科学. 化学,60(4),510-515.
MLA	Zhou, Ke,et al."Comparable charge transport property based on S center dot center dot center dot S interactions with that of pi-pi stacking in a bis-fused tetrathiafulvalene compound".中国科学. 化学 60.4(2017):510-515.

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