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	1.54 μm photoluminescence enhancenment of Er~(3+) -doped ZnO films containing nc-Ge: joint effect from Er~(3+) local environment changing and energy transfer of nc-Ge
	RANRAN FAN; FEI LU; KAIKAI LI
刊名	Photonics Research
	2017
期号	06页码:86-89
关键词	local environment changing and energy transfer of nc-Ge ZnO
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4588106
专题	山东大学
作者单位	School of Information Science and Engineering, Shandong University
推荐引用方式 GB/T 7714	RANRAN FAN,FEI LU,KAIKAI LI. 1.54 μm photoluminescence enhancenment of Er~(3+) -doped ZnO films containing nc-Ge: joint effect from Er~(3+) local environment changing and energy transfer of nc-Ge[J]. Photonics Research,2017(06):86-89.
APA	RANRAN FAN,FEI LU,&KAIKAI LI.(2017).1.54 μm photoluminescence enhancenment of Er~(3+) -doped ZnO films containing nc-Ge: joint effect from Er~(3+) local environment changing and energy transfer of nc-Ge.Photonics Research(06),86-89.
MLA	RANRAN FAN,et al."1.54 μm photoluminescence enhancenment of Er~(3+) -doped ZnO films containing nc-Ge: joint effect from Er~(3+) local environment changing and energy transfer of nc-Ge".Photonics Research .06(2017):86-89.

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