QQ客服 官方微博 反馈留言

	Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption
	Xiao, Longfei; Yang, Xianglong; Duan, Peng; Xu, Huayong; Chen, Xiufang; Hu, Xiaobo; Peng, Yan; Xu, Xiangang
刊名	APPLIED OPTICS
	2018
卷号	57期号:11页码:2804-2808
DOI	10.1364/AO.57.002804
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4583019
专题	山东大学
作者单位	Shandong Univ, State Key Lab Crystal Mat, Jinan 25010
推荐引用方式 GB/T 7714	Xiao, Longfei,Yang, Xianglong,Duan, Peng,et al. Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption[J]. APPLIED OPTICS,2018,57(11):2804-2808.
APA	Xiao, Longfei.,Yang, Xianglong.,Duan, Peng.,Xu, Huayong.,Chen, Xiufang.,...&Xu, Xiangang.(2018).Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption.APPLIED OPTICS,57(11),2804-2808.
MLA	Xiao, Longfei,et al."Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption".APPLIED OPTICS 57.11(2018):2804-2808.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。