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	beta-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD
	Cao, Qiong; He, Linan; Xiao, Hongdi; Feng, Xianjin; Lv, Yuanjie; Ma, Jin
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2018
卷号	77页码:58-63
关键词	beta-Ga2O3 Films Crystal structure MOCVD thermal annealing
DOI	10.1016/j.mssp.2018.01.010
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4582336
专题	山东大学
作者单位	Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China.
推荐引用方式 GB/T 7714	Cao, Qiong,He, Linan,Xiao, Hongdi,et al. beta-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2018,77:58-63.
APA	Cao, Qiong,He, Linan,Xiao, Hongdi,Feng, Xianjin,Lv, Yuanjie,&Ma, Jin.(2018).beta-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,77,58-63.
MLA	Cao, Qiong,et al."beta-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 77(2018):58-63.

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