Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling | |
Mei SZ(梅书哲); Wang Q(王权); Hao ML(郝美兰); Xu JK(徐健凯); Xiao HL(肖红领); Feng C(冯春); Jiang LJ(姜丽娟); Wang XL(王晓亮); Liu FQ(刘峰奇); Xu XG(徐现刚) | |
刊名 | Chinese Physics Letters |
2018 | |
期号 | 09页码:91-95 |
关键词 | MOCVD Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling GaN |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4571789 |
专题 | 山东大学 |
作者单位 | 1.Key Lab of Semiconductor Materials Science 2.[梅书哲 3.王权 4.郝美兰 5.徐健凯 6.肖红领 |
推荐引用方式 GB/T 7714 | Mei SZ,Wang Q,Hao ML,et al. Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling[J]. Chinese Physics Letters,2018(09):91-95. |
APA | Mei SZ.,Wang Q.,Hao ML.,Xu JK.,Xiao HL.,...&Wang ZG.(2018).Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling.Chinese Physics Letters(09),91-95. |
MLA | Mei SZ,et al."Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling".Chinese Physics Letters .09(2018):91-95. |
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