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Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition
Shang, Lei; Song, Longfei; Wang, Yiqian; Cai, Rongsheng; Liu, Lei; Wang, Fengyun
刊名NANOSCALE RESEARCH LETTERS
2018
卷号13
关键词InGaAs nanowires Morphology Microstructures Formation mechanism HRTEM
DOI10.1186/s11671-018-2685-0
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公开日期[db:dc_date_available]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4570111
专题山东大学
作者单位1.Qingdao Univ, Text & Clothing Inst, 308 Ningxia Rd, Qingdao 266071, Peoples R China.
2.Qing
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GB/T 7714
Shang, Lei,Song, Longfei,Wang, Yiqian,et al. Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition[J]. NANOSCALE RESEARCH LETTERS,2018,13.
APA Shang, Lei,Song, Longfei,Wang, Yiqian,Cai, Rongsheng,Liu, Lei,&Wang, Fengyun.(2018).Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition.NANOSCALE RESEARCH LETTERS,13.
MLA Shang, Lei,et al."Formation Mechanisms of InGaAs Nanowires Produced by a Solid-Source Two-Step Chemical Vapor Deposition".NANOSCALE RESEARCH LETTERS 13(2018).
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