Understanding electron-withdrawing substituent effect on structural, electronic and charge transport properties of perylene bisimide derivatives | |
Chai, Shuo1,2; Wen, Shu-Hao1; Han, Ke-Li1 | |
刊名 | organic electronics |
2011-11-01 | |
卷号 | 12期号:11页码:1806-1814 |
关键词 | Charge transport Anisotropic mobility Density functional theory Electron-withdrawing n-Type |
ISSN号 | 待补充 |
通讯作者 | 韩克利 |
产权排序 | 1,1 |
中文摘要 | understanding electron-withdrawing substituent effect on structural, electronic and charge transport properties of perylene bisimide derivatives |
英文摘要 | a series of n-type perylene bisimide (pbi) derivatives with electron-withdrawing substituents at both bay and imide nitrogen positions were investigated. the effects of these substituents on internal energy relaxation, molecular orbitals, air stability, electronic properties and charge transport behaviors were systematically discussed with density functional theory (dft) which has been demonstrated reliable for organic semiconductor study. the investigated derivatives with electron-withdrawing substituents show favorable performances in terms of these properties. the lumo levels are greatly stabilized by at least 0.3 ev and these derivatives show the strong absorption from 400 to 700 nm which match with the solar spectra very well. the charge transport mainly happens between molecules in the same organic molecular layer and electronic couplings between layer-to-layer molecules are very weak, thus the mobility along layer-to-layer direction is less efficient. the variation of molecular packings and intermolecular interactions produce the highly anisotropic mobilities. the derivative with two fluorine atoms at bay positions and -ch2c3f7 at imide group has broad and strong absorption in the uv-visible region and the electron mobility could get to 0.514 cm(2) v (1) s (1) which is greatly encouraging for molecular and material design in organic solar-cell devices. these calculated results are in good agreement with the experimental data. however, not all the functionalization with halogen substituents would induce the increase of the electronic coupling and electron mobility. the derivatives with four halogen substituents at the bay positions could not show advantages in terms of electron mobility which is induced by the distorted conjugated structures. the theoretical understanding of these n-type organic semiconductors figures out the importance of tuning the molecular geometry to get high performance semiconductor materials. (c) 2011 elsevier b.v. all rights reserved. |
学科主题 | 物理化学 |
WOS标题词 | science & technology ; technology ; physical sciences |
类目[WOS] | materials science, multidisciplinary ; physics, applied |
研究领域[WOS] | materials science ; physics |
关键词[WOS] | thin-film transistors ; field-effect transistors ; channel organic semiconductors ; tetracarboxylic diimides ; heterocyclic oligomers ; ambipolar transport ; hopping transport ; single-crystals ; hole mobilities ; pentacene |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000295830700009 |
公开日期 | 2012-07-09 |
内容类型 | 期刊论文 |
源URL | [http://159.226.238.44/handle/321008/115378] |
专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
作者单位 | 1.Dalian Inst Chem Phys, Chinese Acad Sci, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China |
推荐引用方式 GB/T 7714 | Chai, Shuo,Wen, Shu-Hao,Han, Ke-Li. Understanding electron-withdrawing substituent effect on structural, electronic and charge transport properties of perylene bisimide derivatives[J]. organic electronics,2011,12(11):1806-1814. |
APA | Chai, Shuo,Wen, Shu-Hao,&Han, Ke-Li.(2011).Understanding electron-withdrawing substituent effect on structural, electronic and charge transport properties of perylene bisimide derivatives.organic electronics,12(11),1806-1814. |
MLA | Chai, Shuo,et al."Understanding electron-withdrawing substituent effect on structural, electronic and charge transport properties of perylene bisimide derivatives".organic electronics 12.11(2011):1806-1814. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论